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Intrinsic defects and sodium acceptors doping in zinc oxide.

机译:氧化锌中的固有缺陷和钠受体掺杂。

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摘要

Zinc oxide (ZnO), with a direct band gap of 3.37 eV at room temperature, attracts considerable attention because of its promising applications for blue-UV light-emitting diodes, diode lasers and spintronics. A problem with ZnO is that it can easily be made n-type, but it is difficult to dope p-type in a reliable and in a controlled way. In this work, Cermet ZnO single crystals were doped with sodium.Sodium acceptors were activated by air annealing. Photoluminescence (PL) measurements showdonor acceptor pair (DAP) emission in the range ∼ 405–415 nm. Hall measurements show the p-type conductivity in one ZnO sample while in others it shows the indeterminate type of conduction. PL measurements and low temperature Hall measurements suggest that the sodium acceptor activation energy is ∼0.34eV.;Using infrared absorption spectroscopy we have observed hydrogen local vibrational modes (LVMs)in Na-doped ZnO bulk single crystals. When annealing in hydrogen, we find an absorption peak at 3303.7 cm-1 at 9 K, the LVM frequency is in good agreement with theoretical predictions for the sodium-hydrogen complex, with hydrogen in an anti-bonding configuration. With deuterium substituting the hydrogen, we find an additional peak at 2466 cm-1. The isotopic frequency ratio is r vH/vD= 1.339, similar to values found in many hydrogen/deuterium-related complexes.;To confirm that sodium acceptors are passivated by hydrogen, PL measurements were performed on sodium doped and hydrogen annealed sample. No DAP emission was observed in the range ∼ 410-415 nm, consistent with hydrogen passivation. The sample was then oxygen annealed in steps of 500°C, 700°C, 800°C for 45 min. each, and PL measurements were taken after every annealing step. No DAP emission was detected in these spectra. After oxygen annealing at 900°C for 45 min, the DAP emission at ∼ 405–415 nm was recovered while the LVM at 3303.6 cm-1 disappeared. RT Hall measurement show semi-insulating behavior of the sample, consistent with activation of the sodium acceptors.
机译:氧化锌(ZnO)在室温下具有3.37 eV的直接带隙,因其在蓝紫外发光二极管,二极管激光器和自旋电子学中的应用前景广阔而备受关注。 ZnO的问题在于可以轻松地将其制成n型,但是很难以可靠且可控的方式掺杂p型。在这项工作中,Cermet ZnO单晶掺有钠,通过空气退火活化了钠受体。光致发光(PL)测量显示给体受体对(DAP)的发射范围为405-415 nm。霍尔测量显示了一个ZnO样品中的p型电导率,而在其他样品中,它显示了不确定的导电类型。 PL测量和低温霍尔测量表明钠受体活化能约为0.34eV。使用红外吸收光谱法,我们观察到了Na掺杂的ZnO块状单晶中的氢局部振动模(LVM)。在氢中退火时,我们发现在9 K处的吸收峰为3303.7 cm-1,LVM频率与钠-氢配合物的理论预测值非常吻合,并且氢呈反键构型。用氘代替氢,我们在2466 cm-1处发现另一个峰。同位素频率比为r vH / vD = 1.339,与许多与氢/氘相关的络合物中发现的值相似。为了确认钠受体被氢钝化,对掺杂钠和氢退火的样品进行了PL测量。在〜410-415 nm范围内未观察到DAP发射,这与氢钝化一致。然后将样品在500°C,700°C,800°C的步骤中进行氧退火45分钟。每个,并在每个退火步骤后进行PL测量。在这些光谱中未检测到DAP发射。在900°C下氧气退火45分钟后,DAP发射在405-415 nm处恢复,而LVM在3303.6 cm-1处消失。 RT Hall测量显示出样品的半绝缘行为,与钠受体的活化一致。

著录项

  • 作者

    Parmar, Narendra Singh.;

  • 作者单位

    Washington State University.;

  • 授予单位 Washington State University.;
  • 学科 Physics General.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 152 p.
  • 总页数 152
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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