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The nucleation and growth of copper nanoclusters on silicon surfaces from deoxygenated ultra pure water solutions.

机译:脱氧的超纯水溶液在硅表面形成铜纳米团簇并成核并生长。

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摘要

Due to the recent adoption of copper interconnect technology by the semiconductor industry, there has been great interest in understanding the kinetics and mechanisms of copper metal deposition on silicon wafer surfaces in ultra pure water (UPW) solutions. To study copper deposition mechanisms on silicon surfaces, silicon [100] samples were immersed in deoxygenated and non-deoxygenated UPW solutions contaminated with a copper concentration ranging from 0.01 ppb to 1000 ppb while holding the dipping time constant at 300 seconds. By using synchrotron radiation total reflection x-ray fluorescence (TXRF) and x-ray absorption near edge spectroscopy (XANES) in the TXRF geometry, the surface concentration as well as the chemical state of the deposited copper for ultra-low surface concentrations in the range of 4E9 atoms/cm2 (∼10 -6 ML) were determined. From these measurements, it was seen that metallic Cu is deposited in deoxygenated UPW solutions while a mixture of metallic Cu and Cu oxides are deposited in non-deoxygenated UPW solutions. In addition, the copper fluorescence signal was measured as a function of the angle of incidence of the incoming x-rays to determine whether the deposited copper was atomically dispersed or particle-like in nature. It was revealed that samples prepared in nondeoxygenated UPW had Cu that was atomically dispersed near the silicon surface, while the samples immersed in deoxygenated UPW had Cu particles that rose above the silicon surface. To further explore the growth of Cu particles in deoxygenated UPW solutions, silicon samples were immersed in deoxygenated UPW solutions copper concentrations of 100 ppb with dipping times ranging from 5 to 300 seconds. The size and surface density of the metallic copper nanoparticles deposited in deoxygenated UPW solutions was determined for the whole range of dipping times, by using AFM as well as measuring the fluorescence signal as a function of angle. Mathematical models were developed to describe the particle size and density as a function of time. These models had similar results to classical Ostwald ripening mechanisms, where large particles grow at the expense of smaller less thermodynamically stable clusters.
机译:由于半导体工业最近采用了铜互连技术,因此人们对了解超纯水(UPW)解决方案中硅晶片表面铜金属沉积的动力学和机理产生了浓厚的兴趣。为了研究铜在硅表面上的沉积机理,将硅[100]样品浸入被0.01至1000 ppb铜浓度污染的脱氧和非脱氧UPW溶液中,同时将浸入时间保持恒定在300秒。通过在TXRF几何结构中使用同步加速器辐射全反射X射线荧光(TXRF)和近边缘光谱法(XANES)吸收X射线,可以得到超低表面浓度的沉积铜的表面浓度以及化学状态。确定了4E9原子/ cm2(〜10 -6 ML)的范围。从这些测量结果可以看出,金属铜沉积在脱氧的UPW溶液中,而金属铜和铜氧化物的混合物沉积在非脱氧的UPW溶液中。另外,根据入射x射线的入射角测量铜荧光信号,以确定沉积的铜本质上是原子分散的还是颗粒状的。揭示了在非脱氧的UPW中制备的样品具有原子分散在硅表面附近的Cu,而浸入在脱氧的UPW中的样品具有在硅表面上方上升的Cu颗粒。为了进一步探索脱氧的UPW溶液中Cu颗粒的生长,将硅样品浸入100 ppb浓度的脱氧的UPW溶液中,浸入时间为5到300秒。通过使用AFM以及测量荧光信号随角度的变化,确定了在整个浸渍时间范围内,在脱氧的UPW溶液中沉积的金属铜纳米颗粒的尺寸和表面密度。建立了数学模型来描述颗粒大小和密度随时间的变化。这些模型的结果与经典的奥斯特瓦尔德(Ostwald)熟化机制相似,后者以较大的颗粒生长为代价,而较小的热力学稳定度较小的团簇为代价。

著录项

  • 作者

    Singh, Andy.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 147 p.
  • 总页数 147
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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