首页> 外文学位 >Investigation of van der Waals interactions of carbon monoxide and water at the surfaces of pristine gallium nitride nanowires and gold decorated gallium nitride nanowires.
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Investigation of van der Waals interactions of carbon monoxide and water at the surfaces of pristine gallium nitride nanowires and gold decorated gallium nitride nanowires.

机译:研究原始氮化镓纳米线和镀金装饰氮化镓纳米线表面的一氧化碳与水的范德华相互作用。

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摘要

Gas phase interactions at the surfaces of bare and gold nanoparticle (Au NP) decorated gallium nitride (GaN) nanowires (NWs) have been extensively studied using photoelectron spectroscopy under ultra high vacuum conditions. GaN NWs were grown by the vapor-liquid-solid (VLS) mechanism, where the average NWs diameter was 105 ± 75 nm. Au NPs of average size 4-5 ± 0.5 nm were decorated over GaN NWs by plasma enhanced chemical vapor deposition (PECVD). First, the interaction of Au NPs as a function of CO, and H 2O exposures was investigated by examining the shift in an electron binding energy of the Au 4f, C1s and O1s electron core level states at 298 K, 77 K and 20 K using X-ray photoelectron spectroscopy (XPS). XPS analysis revealed for CO and H2O that for temperatures at 298 K and 77 K the interaction with the surface of the Au-GaN NWs was undetectable. However at 20K, the occurrence of binding energy shifts of the Au 4f, C1s, and O1s electron core level states indicated weak physisorption of CO and H2 O onto the Au-GaN NWs surface as opposed to chemisorption. The temperature dependence of the adsorption indicated that the interaction was physisorption and the interaction between the gases and Au-GaN NWs surface was Van Der Waal. Thermal desorption studies using XPS indicated that the adsorbates began to desorb at 298 K.;Ultraviolet photoelectron spectroscopy (UPS) has been used to explore the observed physisorption of CO and H2O with the surface of bare and Au NP-GaN NWs at 298 K, 77 K and 20 K at three different dosing pressures: 9 × 10-8, 9 × 10-7 and 9 × 10-6 Torr. CO and H2O did not bond to the surface of the bare GaN NWs at 298 K, 77 K, or 20 K, even at the highest dosing pressure. Temperature and pressure dependent UPS analysis revealed that CO and H 2O weakly physisorbed to the Au - GaN NWs. For the exposures up to 200 Langmuir(L), the static activation energy of adsorption of CO and H2 O was found to range from 9.0 ± 1.0 to 45.6 ± 4.3 kJ/mole and 2.0 ± 0.1 to 5.0 ± 0.1 kJ/mole, respectively. The adsorption at 298 K of 100 L of CO at all the three dosing pressures, followed by 100 L of H2O, showed that CO adsorption promotes H2O adsorption, while 100 L of H2O followed by 100 L of CO showed that H2 O inhibits CO adsorption. The findings of this study that the adsorption of H2O inhibits CO adsorption onto the Au NP-GaN NWs explain previous studies of the gas sensing properties of mats of Au NP-GaN NWs. The results of this dissertation work, in particular the co-adsorption results, demonstrate that the sensor response to CO and H2O, as well as the order of exposure, is due to competition for adsorption sites and CO-H2O interactions mediated by the order of occupation of the adsorption sites present on Au NPs.;Overall, the results of this research have led to a better understanding of the sensor response of Au-GaN NWs. Also, it was demonstrated that Au-GaN NWs are an excellent system to study the gas phase interaction with the Au NPs since bare GaN NWs are relatively inert.
机译:裸露和金纳米颗粒(Au NP)装饰的氮化镓(GaN)纳米线(NWs)表面的气相相互作用已在超高真空条件下使用光电子能谱进行了广泛研究。 GaN NW是通过气液固(VLS)机理生长的,其中NW的平均直径为105±75 nm。通过等离子体增强化学气相沉积(PECVD)在GaN NW上修饰平均尺寸为4-5±0.5 nm的Au NP。首先,通过研究使用298 K,77 K和20 K的Au 4f,C1s和O1s电子核能级的电子结合能的位移,研究了Au NPs与CO和H 2O暴露的相互作用。 X射线光电子能谱(XPS)。 XPS分析显示,对于CO和H2O,在298 K和77 K的温度下,与Au-GaN NWs表面的相互作用是无法检测到的。但是,在20K时,Au 4f,C1s和O1s电子核能级状态的结合能移动发生,表明CO和H2 O在Au-GaN NWs表面的物理吸附较弱,而不是化学吸附。吸附的温度依赖性表明相互作用是物理吸附,气体与Au-GaN NWs表面之间的相互作用是Van Der Waal。使用XPS进行的热脱附研究表明,被吸附物在298 K下开始脱附;紫外光电子能谱(UPS)已用于研究在298 K下裸露的金Au和NP-GaN NW表面对CO和H2O的物理吸附,在三种不同的计量压力下分别为77 K和20 K:9×10-8、9×10-7和9×10-6 Torr。即使在最高剂量压力下,CO和H2O在298 K,77 K或20 K时也不会结合到GaN NW裸露的表面。与温度和压力有关的UPS分析表明,CO和H 2O弱吸附到Au-GaN NWs。对于高达200 Langmuir(L)的暴露,发现CO和H2 O吸附的静态活化能分别为9.0±1.0至45.6±4.3 kJ / mol和2.0±0.1至5.0±0.1 kJ / mol。 。在所有三个计量压力下,100 L CO在298 K下的吸附,然后是100 L H2O,表明CO吸附促进了H2O吸附,而100 L H2O然后是100 L CO,表明H2 O抑制了CO吸附。 。这项研究的发现表明,H2O的吸附抑制了CO在Au NP-GaN NWs上的吸附,这解释了先前对Au NP-GaN NWs垫的气敏特性的研究。论文的工作结果,特别是共吸附结果,表明传感器对CO和H2O的反应以及暴露的顺序,是由于对吸附位的竞争和由CO2和H2O的相互作用所介导的。总体而言,这项研究的结果使人们对Au-GaN NWs的传感器响应有了更好的了解。另外,由于裸GaN NW相对惰性,因此证明了Au-GaN NW是研究气相与Au NP相互作用的出色系统。

著录项

  • 作者

    Niraula, Ishwar B.;

  • 作者单位

    University of Idaho.;

  • 授予单位 University of Idaho.;
  • 学科 Chemistry Inorganic.;Engineering Materials Science.;Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 110 p.
  • 总页数 110
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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