A high speed RF switch using shifted-gate pHEMTs.

摘要

In many radio frequency (RF) applications, small, high-power, high-speed switches are vital. Currently, pseudomorphic High Electron Mobility Transistors (pHEMTs) are considered among the fastest of the semiconductor devices, capable of operating up to 100 GHz. A topology using simple but modified series and shunt elements was designed to improve upon the switching speed of a RF switch. Each element of the switch was comprised of a single, unbiased, but relatively long pHEMT. By shifting the position of the gate asymmetrically towards the source terminal in these transistors, it was found that the switching time improved, as well as power handling and linearity.