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Investigating plasma modifications and gas-surface reactions of titanate-based materials for photoconversion.

机译:研究用于光转换的钛酸酯基材料的等离子体改性和气体表面反应。

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摘要

Plasmas offer added flexibility for chemists in creating materials with ideal properties. Normally unreactive precursors can be used to etch, deposit and modify surfaces. Plasma treatments of porous and compact TiO2 substrates were explored as a function of plasma precursor, substrate location in the plasma, applied rf power, and plasma pulsing parameters. Continuous wave O2 plasma treatments were found to reduce carbon content and increase oxygen content in the films. Experiments also reveal that Si was deposited throughout the mesoporous network and by pulsing the plasma, Si content and film damage could be eliminated. Nitrogen doping of TiO2 films (N:TiO2) was accomplished by pulsed plasmas containing a range of nitrogen precursors. N:TiO2 films were anatase-phased with up to 34% nitrogen content. Four different nitrogen binding environments were controlled and characterized. The produced N:TiO2 films displayed various colors and three possible mechanisms to explain the color changes are presented.;Both O2 treated and N:TiO2 materials were tested in photocatalytic devices. Preliminary results from photocatalytic activities of plasma treated P25 TiO2 powders showed that nitrogen doping treatments hinder photocatalytic activity under UV light irradiation, but silicon deposition can improve it. N:TiO2 materials were tested in photovoltaic devices to reveal improved short-circuit current densities for some plasma-modified films.;To understand the gas-phase and surface chemistry involved in producing the N:TiO2 films, NH and NH2 species in pulsed NH 3 plasmas were explored by systematically varying peak plasma power and pulsing duty cycle. Results from these studies using gas phase spectroscopy techniques reveal interconnected trends of gas-phase densities and surface reactions. Gas-phase data from pulsed plasmas with two different types of plasma pulsing reveal diminished or increased densities at short pulses that are explained by plasma pulse initiation and afterglow effects. Overall this work reveals characteristics of the plasma systems explored, knowledge of the resulting materials, and control over plasma etching, deposition, and modification of TiO2 surfaces.
机译:等离子为化学家创造具有理想性能的材料提供了更大的灵活性。通常,非反应性前体可用于蚀刻,沉积和修饰表面。探索了多孔和致密的TiO2基板的等离子体处理方法,该方法与等离子体前驱物,等离子体在基板中的位置,施加的射频功率以及等离子体脉冲参数有关。发现连续波O2等离子体处理可减少薄膜中的碳含量并增加氧气含量。实验还表明,硅沉积在整个介孔网络中,通过脉冲等离子体,可以消除硅含量和膜损伤。 TiO2薄膜(N:TiO2)的氮掺杂是通过包含一系列氮前体的脉冲等离子体完成的。 N:TiO2薄膜呈锐钛矿相,含氮量高达34%。控制和表征了四个不同的氮结合环境。所生产的N:TiO2薄膜显示出各种颜色,并提出了三种可能的机理来解释颜色变化。;在光催化装置中测试了O2处理过的材料和N:TiO2材料。等离子体处理的P25 TiO2粉末的光催化活性的初步结果表明,氮掺杂处理会阻碍UV辐射下的光催化活性,但是硅沉积可以改善它。在光伏设备中对N:TiO2材料进行了测试,以揭示某些等离子体改性膜的短路电流密度得到了改善。;了解在脉冲NH中制备N:TiO2膜,NH和NH2物种所涉及的气相和表面化学通过系统地改变峰值等离子体功率和脉冲占空比来探索3种等离子体。这些使用气相色谱技术的研究结果表明,气相密度和表面反应相互关联。来自具有两种不同类型等离子体脉冲的脉冲等离子体的气相数据表明,短脉冲的密度减小或增加,这可以通过等离子体脉冲引发和余辉效应来解释。总的来说,这项工作揭示了所探索的等离子体系统的特征,所获得材料的知识以及对TiO2表面的等离子体蚀刻,沉积和改性的控制。

著录项

  • 作者

    Pulsipher, Daniel J. V.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Chemistry Inorganic.;Engineering Materials Science.;Chemistry Physical.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 176 p.
  • 总页数 176
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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