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Hybrid Silicon AWG Lasers and Buffers.

机译:混合硅AWG激光器和缓冲器。

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摘要

Silicon photonics promises the low cost integration of optical components with CMOS electronics thus enabling optical interconnects in future generation processors. The hybrid silicon platform (HSP) is one approach to make optically active components on silicon. While many optical components on the HSP have been demonstrated, few photonic integrated circuits (PICs), consisting of multiple elements, have been demonstrated. In this dissertation, two Hybrid Silicon PICs and their building blocks will be presented.;The first PIC to be presented is a multiwavelength laser based on an AWG. It consists of Fabry--Perot cavities integrated with hybrid silicon amplifiers and an intracavity filter in the form of an AWG with a channel spacing of 360 GHz. Four-channel lasing operation is shown. Single-sided fiber-coupled output powers as high as 35 microW are measured. The SMSR is as high as 35 dB. Various device characteristics are compromised as the AWG was attacked during the III-V process, thus showing the need to properly protect passive components during III-V processing.;The second PIC to be presented is a fully integrated optical buffer. The device consists of a hybrid silicon switch, a 1.1 m long silicon waveguide, and cascaded hybrid silicon amplifiers. The passive delay line is protected by dielectric layers to limit passive losses to 0.5 dB/cm. Noise filters in the form of saturable absorbers are integrated in the buffer to allow for a larger number of recirculations in the delay line compared to a delay without filters. Tapers are used to transition the mode from the passive region to the hybrid region with losses as low as 0.22 dB per transition and reflectivities below -35 dB. Error free operation of the hybrid silicon switch is demonstrated in all four paths. The integrated buffer failed due to low yield, showing the current limitations of the HSP.
机译:硅光子技术承诺将光学组件与CMOS电子产品进行低成本集成,从而在下一代处理器中实现光学互连。混合硅平台(HSP)是在硅上制造光学有源组件的一种方法。虽然已经展示了HSP上的许多光学组件,但几乎没有展示由多个元素组成的光子集成电路(PIC)。本文将介绍两个混合硅PIC及其构建模块。第一个要介绍的PIC是基于AWG的多波长激光器。它由与混合硅放大器集成的Fabry-Perot腔和AWG形式的腔内滤波器组成,通道间隔为360 GHz。显示了四通道激射操作。测得的单侧光纤耦合输出功率高达35微瓦。 SMSR高达35 dB。由于AWG在III-V流程中受到攻击,因此各种器件特性受到损害,因此表明需要在III-V处理期间适当保护无源组件。第二个PIC是完全集成的光缓冲器。该器件包括一个混合硅开关,一个1.1 m长的硅波导和级联混合硅放大器。无源延迟线由介电层保护,以将无源损耗限制为0.5 dB / cm。与不带滤波器的延迟器相比,可饱和吸收器形式的噪声滤波器被集成在缓冲器中,以允许在延迟线中进行更多的再循环。锥度用于将模式从无源区域转换到混合区域,每次转换的损耗低至0.22 dB,反射率低于-35 dB。在所有四个路径中均展示了混合硅开关的无错操作。集成缓冲器由于产量低而失败,这表明了HSP的当前局限性。

著录项

  • 作者

    Kurczveil, Geza.;

  • 作者单位

    University of California, Santa Barbara.;

  • 授予单位 University of California, Santa Barbara.;
  • 学科 Engineering Electronics and Electrical.;Nanotechnology.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 134 p.
  • 总页数 134
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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