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Low voltage low stress MEMS variable capacitors for RF applications.

机译:用于射频应用的低压低应力MEMS可变电容器。

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摘要

With the current trend of low voltage and/or low power electronic and RF circuits, problems and challenges that face engineers are always arising. MEMS has been used in designing filters, switches, varactors, inductors, and other RF devices. In many cases, MEMS devices are superior to their microelectronics counterparts, but their design and simulation tools are not flourishing as fast.; Researchers paid considerable attention to RF MEMS devices, but tunable matching networks did not receive the same consideration. This thesis treats tunable matching networks extensively and introduces a systematic design approach for their design. The approach is unique in two ways: (1) it incorporates some of the parasitic losses, and (2) provides results with accuracy and speed.; The tunable matching network that was analyzed required two variable capacitors and a variable inductor. High tuning range and low actuation voltage is required. Thus, a MEMS varactor design was introduced. For the first time, a capacitor structure that takes into account residual stress and stress effects was suggested. Additionally, a finite element model using ANSYS was also tackled. Two capacitors were designed which were different only in size (475mum x 475mum, and 205mum x 205mum). Simulation results show that the capacitors required 2.52V and 1.8V to achieve actuation, and provided a TR of 4.9:1 and 4.6:1 respectively. The suggested suspension was compared with other suspension configurations in terms of stress and it was proven that the suggested suspension design possesses the least stress upon deflection.; The model was created and fabricated in MUMPS through the Canadian Microelectronic Corporation. Measurement results show that the required voltages to achieve actuation are 9V and 4.5V, and the TR range measured was 3.4:1 and 3:1 respectively. All the measurements were done at 1 GHz. The resonant frequency was measured to be approximately 4GHz.
机译:随着低电压和/或低功率电子和RF电路的当前趋势,工程师面临的问题和挑战总是不断出现。 MEMS已用于设计滤波器,开关,变容二极管,电感器和其他RF器件。在许多情况下,MEMS器件要优于其微电子器件,但其设计和仿真工具却发展得并不快。研究人员对RF MEMS器件给予了极大的关注,但是可调匹配网络并未得到同样的考虑。本文对可调谐匹配网络进行了广泛的论述,并为它们的设计引入了系统的设计方法。该方法有两种独特的方法:(1)合并了一些寄生损耗,(2)提供了准确且快速的结果。经过分析的可调匹配网络需要两个可变电容器和一个可变电感器。需要高调谐范围和低驱动电压。因此,引入了MEMS变容二极管设计。首次提出了考虑残余应力和应力影响的电容器结构。此外,还解决了使用ANSYS的有限元模型。设计了两个仅尺寸不同的电容器(475μmx475μm和205μmx 205mum)。仿真结果表明,电容器需要2.52V和1.8V的电压才能实现驱动,并且TR分别为4.9:1和4.6:1。将建议的悬架与其他悬架构型在应力方面进行了比较,并证明了建议的悬架设计在挠曲时具有最小的应力。该模型是通过加拿大微电子公司在MUMPS中创建和制造的。测量结果表明,实现驱动所需的电压为9V和4.5V,TR范围分别为3.4:1和3:1。所有测量均在1 GHz下进行。测得的谐振频率约为4GHz。

著录项

  • 作者

    Elshurafa, Amro Munir.;

  • 作者单位

    Dalhousie University (Canada).;

  • 授予单位 Dalhousie University (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.A.Sc.
  • 年度 2005
  • 页码 111 p.
  • 总页数 111
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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