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A Microfabricated Deuterium Ion Source for Compact Neutron Generators.

机译:用于紧凑型中子发生器的超细氘离子源。

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摘要

Active neutron interrogation is generally accepted as a reliable means of detecting the illicit transportation of special nuclear materials, in particular highly enriched uranium. The development of portable active neutron interrogation systems for field detection applications could be facilitated by the use of a new deuterium ion source which has the potential to advance many of the performance limiting aspects of exiting compact, accelerator-driven neutron generators.;The ion source being investigated is a gated array of sharp metal tips that uses high electric fields to generate deuterium ion currents through the physical processes of field ionization and field desorption. The deuterium ions produced by the source are extracted and used to drive a D-D (or D-T) fusion reaction to create neutrons. The basic microstructure for the ion source array is derived from modern semiconductor microfabrication technology for field emitter arrays, though many structural modifications have been made in an attempt to reach the required operating fields of the ion generation processes. Pulsed (field desorption) and d.c. (field ionization) tests conducted with each array design type developed thus far indicate a steady improvement in array tip operating fields.;Field ionization studies were conducted with arrays at source temperatures of 77 K and 293 K. Newly developed arrays have demonstrated field ionization currents upwards of ∼50 nA, which is roughly 50% of the maximum ion production possible, as presently fabricated. Neutron production by field ionization was demonstrated for the first time from the microfabricated arrays. A maximum neutron yield of 95 n/s (6300 n/s/cm2 of array active area) was observed from a 1.5 mm2 array using a D-D fusion reaction at -90 kV.;Field desorption studies at 77 K and 293 K were conducted in parallel with field ionization testing. To date, the arrays have consistently demonstrated the field desorption of deuterium ions from array tip surfaces. The number of deuterium ions desorbed was quantified and found to be significantly less than predicted. The low deuterium ion yields have been attributed to the presence of surface contaminants that inhibit the adsorption of deuterium. As such, thermal and hydrogen plasma cleaning methods are being investigated to condition the array tip surfaces.;For both field ionization and field desorption, improved array designs that can achieve higher tip operating fields are required before predicted neutron yields (>109 n/s/cm2) can be demonstrated.
机译:主动中子探询通常被认为是检测特殊核材料特别是高浓缩铀非法运输的可靠手段。通过使用新型氘离子源,可以促进用于现场检测应用的便携式有源中子询问系统的开发,这种氘离子源有可能推动现有小型,加速器驱动的中子发生器的性能下降。正在研究的是尖锐金属尖端的门控阵列,该尖端阵列使用高电场通过场电离和场解吸的物理过程产生氘离子流。提取由离子源产生的氘离子,并将其用于驱动D-D(或D-T)聚变反应以产生中子。离子源阵列的基本微观结构源自用于场发射器阵列的现代半导体微细加工技术,尽管已经进行了许多结构修改,以达到离子产生过程所需的操作领域。脉冲(场解吸)和d.c.到目前为止,使用每种开发的阵列设计类型进行的(场电离)测试表明,在阵列尖端操作领域中的性能得到了稳步提高。;在源温度为77 K和293 K的条件下对阵列进行了场电离研究。新开发的阵列已证明了场电离电流高达约50 nA,大约是目前制造的最大离子产生量的50%。首次证明了通过微型阵列从现场电离产生中子。使用-90 kV的DD聚变反应从1.5 mm2阵列观察到最大中子产率为95 n / s(阵列有效面积为6300 n / s / cm2);在77 K和293 K进行了场解吸研究与现场电离测试同时进行。迄今为止,这些阵列始终如一地证明了氘离子从阵列尖端表面的脱附。定量解吸的氘离子数量,发现明显少于预期。氘离子产率低归因于抑制氘吸附的表面污染物的存在。因此,正在研究热等离子体和氢等离子体清洗方法来调节阵列尖端表面;对于场电离和场解吸,需要改进的阵列设计以实现更高的尖端操作场,然后才能预测中子产率(> 109 n / s / cm2)。

著录项

  • 作者

    Johnson, Benjamin Bargsten.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Physics General.;Physics Atomic.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 215 p.
  • 总页数 215
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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