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High electric field deuterium ion sources for neutron generators.

机译:用于中子发生器的高电场氘离子源。

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摘要

Active interrogation systems for highly enriched uranium require improved fieldable neutron sources. The target technology for deuterium-tritium neutron generators is well understood and the most significant improvement can be achieved by improving the deuterium ion source through increased output and, in some cases, lifetime of the ion source. We are developing a new approach to a deuterium ion sources based upon the field desorption/evaporation of deuterium from the surfaces of metal tips.;Electrostatic field desorption (EFD) desorbs previously adsorbed deuterium as ions under the influence of high electric fields (several V/A), without removing tip material. Single etched wire tip experiments have been performed and have shown that this is difficult but can be achieved with molybdenum and tungsten tips.;Electrostatic field evaporation (EFE) evaporates ultra thin deuterated titanium films as ions. It has been shown that several 10s of atomic layers can be removed within a few nanoseconds from etched tungsten tips. In the course of these studies titanium deposition and deuteration methods were studied and new detection methods developed. Space charge effects resulting from the large ion currents were identified to be the most likely cause of some unusual ion emission characteristics. In addition, on W 110 > oriented substrates a surprising body-centered cubic crystal structure of the titanium film was found and studied.;The ion currents required for neutron generator applications can be achieved by microfabrication of metal tip arrays. Field desorption studies of microfabricated field emitter tip arrays have been conducted for the first time. Maximum fields of 3 V/A have been applied to the array tip surfaces to date, although fields of ∼ 2 V/A to ∼ 2.5 V/A are more typical. Desorption of atomic deuterium ions has been observed at fields of roughly 2 V/A at room temperature. The desorption of common surface adsorbates, such as hydrogen, carbon, water, and carbon monoxide is observed at fields exceeding ∼1 V/A. In vacuo heating of the arrays to temperatures of the order of 800°C can be effective in removing many of the surface contaminants observed.;For both the field desorption and the field evaporation approaches further improvements to array design and fabrication are required if arrays are to provide sufficient deuterium ion currents to produce 109 to 1010 n/cm2 of tip array area for the detection systems.
机译:用于高浓缩铀的主动询问系统需要改进的现场中子源。氘-中子发生器的目标技术已广为人知,并且可以通过增加输出量以及在某些情况下延长离子源的寿命来改善氘离子源,从而实现最显着的改进。我们正在根据金属尖端表面上氘的场解吸/蒸发来开发一种氘离子源的新方法。;静电场解吸(EFD)在高电场(几个V)的影响下将先前吸附的氘解吸为离子/ A),而不会除去尖端材料。已经进行了单蚀刻的线尖端实验,结果表明这很困难,但是可以使用钼和钨尖端实现。静电场蒸发(EFE)可以将超薄氘化钛膜作为离子蒸发。已经显示,可以在几纳秒内从蚀刻的钨尖端去除几十个原子层。在这些研究过程中,研究了钛沉积和氘化方法,并开发了新的检测方法。大离子电流引起的空间电荷效应被认为是某些异常离子发射特性的最可能原因。此外,在W <110>取向的衬底上,发现并研究了钛膜的令人惊讶的体心立方晶体结构。中子发生器应用所需的离子电流可通过金属尖端阵列的微制造来实现。首次进行了微制造场发射器尖端阵列的场解吸研究。迄今为止,已将3 V / A的最大电场施加到阵列尖端表面,尽管更典型的是〜2 V / A至〜2.5 V / A的电场。在室温下,在大约2 V / A的磁场中观察到原子氘离子的解吸。在超过约1 V / A的电场中观察到常见的表面吸附物(例如氢,碳,水和一氧化碳)的解吸。在真空中将阵列加热到800°C左右的温度可以有效去除观察到的许多表面污染物。;对于场解吸和场蒸发方法,如果需要阵列,则需要对阵列设计和制造进行进一步改进为检测系统提供足够的氘离子电流以产生109至1010 n / cm2的尖端阵列区域。

著录项

  • 作者

    Reichenbach, Birk.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 214 p.
  • 总页数 214
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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