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Boron carbide nanowires: Synthesis and characterization.

机译:碳化硼纳米线:合成与表征。

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摘要

Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance.;This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a solid orthorhombic phase catalyst. The status of a catalyst depends mainly on temperature. (3) Observation of "invisible" defects in boron carbide nanowires. The planar defects can only be seen under a transmission electron microscope when the electron beam is within the defect plane. Furthermore, there are only two directions within that plane, along which the orientation of defect can be told and clear TEM results can be taken. The challenge is that the TEM sample holder is limited to tilt +/-30° in each direction. A theory was developed based on lattice calculation and simulation to tell the orientation of defect even not from those unique directions. Furthermore, it was tested by experimental data and proved to be successful. (4) Preliminary exploration of structure-transport property of as-synthesized boron carbide nanowires. In collaboration with experts in the field of thermal science, thermal transport properties of a few boron carbide nanowires were studied. All measured nanowires were either pre-characterized or post-characterized by TEM to reveal their structural information such as diameter, fault orientations and chemical composition. The obtained structural information was then analyzed together with measured thermal conductivity to establish a structure-transport property relation. Current data indicate that TF ones have a lower thermal conductivity, which is also diameter-dependent.
机译:散装碳化硼已被广泛用于防弹背心,其性能表征一直侧重于机械性能。尽管碳化硼也已被预测为一种有前途的用于能量收集的高温热电材料,但在该领域的研究仍受到限制。由于块状碳化硼的热导率仍然较高,因此有很大的机会利用纳米效应进一步降低它,以获得更好的热电性能。本论文的目的是探讨是否可以在硼中发现改善的热电性能。碳化物纳米线与其批量对应物相比。本论文主要由四个部分组成。 (1)碳化硼纳米线的合成。碳化硼纳米线是通过在自制的低压化学气相沉积(LPCVD)系统中在低温下(最低温度879°C)将乙硼烷和甲烷共热解合成的。基于CVD的方法既节能又经济。合成后的纳米线通过电子显微镜进行了广泛表征。透射电子显微镜(TEM)结果表明,纳米线是具有平面缺陷的单晶。根据纳米线的首选生长方向与缺陷方向之间的几何关系,合成后的纳米线可进一步分为两类:横向断裂(TF)纳米线垂直于缺陷平面生长,而轴向断裂( AF)会在缺陷平面内生长。 (2)了解合成的碳化硼纳米线的生长机理。生长机理通常可以认为是著名的气-液-固(VLS)机理。发现TF和AF纳米线由两相的Ni-B催化剂引导。 TF纳米线由六方相催化剂引导,已被证明在反应过程中呈液态。当AF纳米线被固体正交相催化剂催化时。催化剂的状态主要取决于温度。 (3)观察碳化硼纳米线中的“隐形”缺陷。当电子束在缺陷平面内时,只能在透射电子显微镜下看到平面缺陷。此外,在该平面内只有两个方向,可以沿该两个方向指示缺陷的方向,并可以获取清晰的TEM结果。挑战在于,TEM样品支架在每个方向上的倾斜角度都限制为+/- 30°。基于晶格计算和仿真的理论被开发出来,即使不是从那些独特的方向上也可以告诉缺陷的方向。此外,通过实验数据对其进行了测试,并证明是成功的。 (4)初步研究了合成碳化硼纳米线的结构输运性质。与热科学领域的专家合作,研究了一些碳化硼纳米线的热传输性能。所有测得的纳米线都通过TEM进行了预表征或后表征,以揭示其结构信息,例如直径,断层取向和化学成分。然后将获得的结构信息与测得的热导率一起进行分析,以建立结构-传输性质的关系。当前数据表明,TF导热系数较低,这也与直径有关。

著录项

  • 作者

    Guan, Zhe.;

  • 作者单位

    The University of North Carolina at Charlotte.;

  • 授予单位 The University of North Carolina at Charlotte.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 120 p.
  • 总页数 120
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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