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Boron carbide nanowires: low temperature synthesis and structural and thermal conductivity characterization

机译:碳化硼纳米线:低温合成以及结构和热导率表征

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摘要

Boron carbide nanowires, a promising class of high temperature thermoelectric nanomaterials, are synthesized by co-pyrolysis of diborane and methane in a low pressure chemical vapor deposition system via the vapor-liquid-solid growth mechanism. Nickel and iron are effective catalytic materials. The synthesis is realized at relatively lower temperatures, with 879 °C as the lowest one. Electron microscopy analysis shows that the as-synthesized nanowires have diameters between 15 and 90 nm and lengths up to 10 urn. The nanowires have single crystalline boron carbide cores and thin amorphous oxide sheaths. Both transverse faults and axial faults with fault planes as {101}_h-type are observed, which could provide additional measures to tune the nanowire transport properties for better thermoelectric performance. Measurement of individual boron carbide nanowires reveals that the thermal conductivity is diameter-dependent, which indicates that boundary scattering still provides an effective approach to reduce the wire thermal conductivity for enhanced thermoelectric performance.
机译:碳化硼纳米线是一种有前途的高温热电纳米材料,它是通过在低压化学气相沉积系统中通过气-液-固生长机制将乙硼烷和甲烷共热解而合成的。镍和铁是有效的催化材料。该合成是在较低的温度下实现的,最低温度为879°C。电子显微镜分析表明,合成后的纳米线的直径在15至90 nm之间,长度最大为10 um。纳米线具有单晶碳化硼核和薄的非晶氧化物皮。观察到断层为{101} _h型的横向断层和轴向断层,这可以提供额外的措施来调节纳米线的传输特性,以获得更好的热电性能。对单个碳化硼纳米线的测量表明,导热系数与直径有关,这表明边界散射仍然是降低导线导热系数以增强热电性能的有效方法。

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