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Integrated-optic electrorefraction modulators.

机译:集成光学电折射调制器。

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摘要

The large electroabsorption (EA) and electrorefraction (ER) effects that can be achieved in coupled quantum well (CQW) structures give these structures great potential for use in intensity, phase, and polarization modulators for future optical links. This thesis focuses on designing structures that will result in state-of-the-art performance of CQW-based modulators.; In this thesis, a design for a push-pull polarization-modulation scheme is presented, and it requires placing multiple repetitions of two different CQW structures in the optical waveguide of the proposed polarization modulator. The main function of one of the two structures is to provide a large increase of the refractive index for the TM polarization, without a proportionate increase of the refractive index for the TE polarization. It is shown that this effect can be achieved by anticrossing light holes. The main function of the other structure is to provide a large decrease of the refractive index for the TE polarization, without a proportionate decrease of the refractive index for the TM polarization. It is shown that, although this effect can be efficiently achieved by anticrossing heavy holes, the CQW structures that achieve this effect by anticrossing electrons are less sensitive to the layer thickness and compositional variations that may be expected during the growth process. The large EA and ER effects in CQW structures are typically seriously compromised by the layer variations, and, it is shown in this thesis that decreasing the confinement of the anticrossing wave functions can decrease the sensitivities of the CQW structures to these variations. In addition, the very small confinement of light holes in the InGaAlAs-based material systems together with the small sensitivity of the light-hole band edge to the compositional variations, make the anticrossing of the light holes the most robust-to-growth and, therefore, the most promising mode of operation for CQW-based ER intensity, phase, and polarization modulators.; The absorption spectra of the novel CQW structures designed in this thesis are obtained using the variational method for solving the 1S exciton equation in the effective-mass, envelope-function approximation, and the electric-field-induced refractive index changes are obtained using the Kramers-Kronig relations.
机译:在耦合量子阱(CQW)结构中可以实现的大电吸收(EA)和电折射(ER)效应为这些结构提供了巨大的潜力,可用于将来的光链路的强度,相位和偏振调制器中。本文着重于设计结构,以实现基于CQW的调制器的最新性能。本文提出了一种推挽式偏振调制方案的设计,它要求在所提出的偏振调制器的光波导中放置两个不同的CQW结构的多个重复。两种结构之一的主要功能是使TM偏振的折射率大大增加,而不会使TE偏振的折射率成比例增加。结果表明,可以通过反交叉光孔来实现这种效果。其他结构的主要功能是使TE偏振的折射率大大降低,而不会使TM偏振的折射率成比例地降低。结果表明,尽管通过反交叉重空穴可以有效地实现该效果,但是通过反交叉电子实现此效果的CQW结构对生长过程中可能期望的层厚度和组成变化较不敏感。 CQW结构中较大的EA和ER效应通常会受到层变化的严重损害,并且本文证明了减小反交叉波函数的限制会降低CQW结构对这些变化的敏感性。此外,基于InGaAlAs的材料系统中的光孔限制非常小,并且光孔带边缘对成分变化的敏感性较小,这使得光孔的抗交叉性能最稳定,并且,因此,对于基于CQW的ER强度,相位和偏振调制器而言,最有希望的工作模式。本论文设计的新型CQW结构的吸收光谱是利用变分法求解1S激子方程的有效质量,包络函数近似,并利用Kramers获得了电场引起的折射率变化。 -克罗尼希(Kronig)关系。

著录项

  • 作者

    Ristic, Sasa.;

  • 作者单位

    The University of British Columbia (Canada).;

  • 授予单位 The University of British Columbia (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 192 p.
  • 总页数 192
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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