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Disorder and doping in the oxygenated electron-doped superconductor praseodymium cerium copper oxide.

机译:氧化的电子掺杂超导体铈铈铜氧化物中的无序和掺杂。

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摘要

This thesis is composed of two parts: the first part deals with the high temperature electron-doped superconductor Pr2-xCe xCuO4+/-delta; the second part deals with the diluted magnetic semiconductor Ti1-xCo xO2-delta.; It is not clear why oxygen reduction and cerium doping are necessary to obtain superconductivity in the electron-doped Pr2- xCexCuO4+/-delta. I investigated the effects of oxygenation in this material using resistivity and Hall measurements. For various oxygen contents, I was able to determine that there is a separable doping and a disorder contribution to the superconducting transition temperature. I was able to quantitatively separate out these two effects and show that these two effects are opposite with regards to changes in Tc for overdoped thin films. The disorder component is roughly twice as large as the doping component. This analysis is also shown to be self consistent in demonstrating that the doping component of oxygen variation follows the trends of Cerium doping.; For the diluted magnetic semiconductor Ti1-x CoxO2-delta, I investigated the intrinsic nature of the ferromagnetism observed in thin films. Hall effect measurements were used as the technique because ferromagnetic materials exhibit an anomalous Hall effect, which is due to an interaction between the charge carriers and the magnetic moments. I found that low carrier concentration anatase phase films did not exhibit an anomalous Hall effect, whereas high carrier concentration rutile phase films do. The presence of the anomalous Hall effect at this point cannot be attributed to an intrinsic ferromagnetism as cobalt clusters are observed in these films.
机译:本文由两部分组成:第一部分研究高温电子掺杂超导体Pr2-xCexCuO4 +/-δ。第二部分涉及稀释的磁性半导体Ti1-xCoxO2-δ。尚不清楚为什么要在电子掺杂的Pr2-xCexCuO4 +/-δ中获得超导性,必须进行氧还原和铈掺杂。我使用电阻率和霍尔测量研究了这种材料中氧合的影响。对于各种氧含量,我能够确定存在可分离的掺杂和对超导转变温度的无序贡献。我能够定量地分离出这两种效应,并表明这两种效应在过量掺杂薄膜的Tc变化方面是相反的。无序分量大约是掺杂分量的两倍。该分析在证明氧变化的掺杂成分遵循铈掺杂趋势方面也被证明是自洽的。对于稀释的磁性半导体Ti1-x CoxO2-delta,我研究了在薄膜中观察到的铁磁性的固有性质。霍尔效应测量被用作该技术,因为铁磁性材料表现出异常的霍尔效应,这是由于电荷载流子与磁矩之间的相互作用所致。我发现低载流子浓度的锐钛矿相膜不会表现出异常的霍尔效应,而高载流子浓度的金红石相膜会表现出异常的霍尔效应。由于在这些薄膜中观察到钴团簇,因此霍尔电流异常的存在不能归因于固有的铁磁性。

著录项

  • 作者

    Higgins, Joshua Scott.;

  • 作者单位

    University of Maryland, College Park.;

  • 授予单位 University of Maryland, College Park.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 218 p.
  • 总页数 218
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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