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Design and integration of current-mode on-chip interconnect signaling in nanometer technologies.

机译:纳米技术中电流模式片上互连信号的设计和集成。

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摘要

As feature sizes progress into nanometer realms, on-chip interconnects play an increasing role in the overall performance and power consumption of high-performance integrated circuits. Three novel on-chip interconnect communication techniques are presented; (i) differential current-transfer sensing, (ii) multi-level current signaling, (iii) swing-limited interconnect communication; silicon implementation and an integration methodology in conventional CAD flow are proposed. The differential current-transfer sense amplifier ( DCTSA), is a new static-power mitigated receiver for conventional differential current-sensing. It is compared with the conventional differential current sense amplifier (DCSA) and standard repeaters. Results in 130nm, 65nm and 45nm show that DCTSA outperforms repeaters for wires with activity of 50% and higher and length longer than 4mm. The multi-level current signaling technique with novel driver and receiver circuits is proposed which encode two bits on one interconnect using current levels. This multi-level system is compared with conventional repeaters for process technologies including 130nm, 90nm, 65nm and 45nm. The impact of process induced parameter variations was analyzed and a process tolerant driver was presented. Compared to repeaters, multi-level current signaling is attractive for wires longer than 4mm and with activity factors more than 40%. A swing-limited interconnect current-mode technique is proposed with a novel low-swing receiver circuit, which achieves energy efficient transmission for on-chip interconnects over repeaters. This swing-limited interconnect system is compared with repeaters in a 65nm industrial CMOS technology. With this signaling technique there is a 56% energy reduction and 21% delay reduction compared to repeaters. Delay savings increase by 8% at supply of 1.4v at iso energy. A total area savings of 86% is obtained in device width with this technique. A methodology and tool for the integration of current-mode interconnect techniques into conventional design flow was presented. The methodology and tool called Network-on-Chip Interconnect Calculator provides results in terms of delay and power for interconnects, and illustrates the effects of delay and power on input parameters in plots. It hides the circuit level details of the proposed current-mode techniques and provides a simple library that can be used by conventional CAD flow. The proposed signaling techniques along with conventional repeater insertion method have been implemented in silicon in IBM 130nm technology through MOSIS for different wirelengths showing proof-of-concept. The test chip is fully functional and the measurement results closely followed the simulated results, thus verifying the validity of the proposed techniques and their benefit over existing techniques for on-chip interconnects.
机译:随着特征尺寸发展到纳米领域,片上互连在高性能集成电路的整体性能和功耗中扮演着越来越重要的角色。提出了三种新颖的片上互连通信技术。 (i)差分电流传输感测;(ii)多级电流信令;(iii)限幅互连通信;提出了常规CAD流程中的硅实现方法和集成方法。差分电流传输感测放大器(DCTSA)是一种用于常规差分电流感测的新型静态功耗降低接收器。它与传统的差分电流检测放大器(DCSA)和标准中继器进行了比较。在130nm,65nm和45nm的测试结果表明,DCTSA的性能优于50%或更高且长度超过4mm的电线中继器。提出了具有新颖的驱动器和接收器电路的多级电流信令技术,该技术使用电流电平在一个互连上编码两位。将该多层系统与用于130nm,90nm,65nm和45nm等工艺技术的传统中继器进行了比较。分析了过程引起的参数变化的影响,并提出了过程容限驱动程序。与中继器相比,多级电流信号传输对于长度大于4mm且活动系数大于40%的电线具有吸引力。提出了一种具有新型低摆幅接收器电路的摆幅受限互连电流模式技术,该电路可通过中继器实现片上互连的节能传输。该摆动受限的互连系统与65nm工业CMOS技术中的中继器进行了比较。与中继器相比,使用这种信令技术可将能耗降低56%,将延迟降低21%。在等能量下以1.4v供电时,延迟节省增加了8%。通过这种技术,在器件宽度上总共节省了86%的面积。提出了一种将电流模式互连技术集成到常规设计流程中的方法和工具。称为“片上网络互连计算器”的方法和工具提供了互连的延迟和功率方面的结果,并说明了延迟和功率对图中输入参数的影响。它隐藏了所提出的电流模式技术的电路级细节,并提供了一个可用于常规CAD流程的简单库。通过MOSIS,IBM 130nm技术的硅片中已针对不同的线长实现了建议的信令技术以及传统的中继器插入方法,以显示概念验证。测试芯片功能齐全,测量结果紧随模拟结果,从而验证了所提出技术的有效性以及它们相对于片上互连现有技术的好处。

著录项

  • 作者

    Venkatraman, Vishak Kumar.;

  • 作者单位

    University of Massachusetts Amherst.;

  • 授予单位 University of Massachusetts Amherst.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 168 p.
  • 总页数 168
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:39:56

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