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Low temperature sintering semiconducting barium strontium titanate .

机译:低温烧结半导体钛酸锶钡。

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摘要

Low temperature sintering has become a very important research area in ceramics processing and sintering as a promising process to obtain grain size below 100nm. For electronic ceramics, low temperature sintering is particularly difficult, because not only the required microstructure but also the desired electronic properties should be obtained. In this dissertation, the effect of liquid sintering aids and particle size (micrometer and nanometer) on sintering temperature and Positive Temperature Coefficient Resistivity (PTCR) property are investigated for Ba1-xSrxTiO3 (BST) doped with 0.2-0.3mol% Sb3+ (x = 0.1, 0.2, 0.3, 0.4 and 0.5). Different sintering aids with low melting point are used as sintering aids to decrease the sintering temperature for micrometer size BST particles. Micrometer size and nanometer size Ba1-xSrxTiO 3 (BST) particles are used to demonstrate the particle size effect on the sintering temperature for semiconducting BST. To reduce the sintering temperature, three processes are developed, i.e. 1 using sol-gel nanometer size Sb3+ doped powders with a sintering aid; 2 using micrometer size powders plus a sintering aid; and 3 using nanometer size Sb3+ doped powders with sintering aids. Grain size effect on PTCR characteristics is investigated through comparison between micrometer size powder sintered pellets and nanometer size powder sintered pellets. The former has lower resistivity at temperatures below the Curie temperature (Tc) and high resistivity at temperatures above the Curie temperature (Tc) along with higher rho max/rhomin ratio (rhomax is the highest resistivity at temperatures above Tc, rhomin is the lowest resistivity at temperatures below Tc), whereas the latter has both higher rho max and rhomin. Also, rhomax/rhomin is smaller than that of pellets with larger grain size. The reason is that the solid with small grain size has more grain boundaries than the solid with large grain size. The contribution z at room temperature and high temperature and a lower rhomax/rhomin ratio value.
机译:低温烧结已经成为陶瓷加工和烧结中非常重要的研究领域,作为获得小于100nm晶粒尺寸的有前途的工艺。对于电子陶瓷,低温烧结特别困难,因为不仅应获得所需的微结构,而且还应获得所需的电子性能。本文研究了掺杂0.2-0.3mol%Sb3 +的Ba1-xSrxTiO3(BST)的液体烧结助剂和粒径(微米和纳米)对烧结温度和正温度系数电阻率(PTCR)性能的影响。 0.1、0.2、0.3、0.4和0.5)。使用低熔点的不同烧结助剂作为烧结助剂,以降低微米级BST颗粒的烧结温度。微米级和纳米级Ba1-xSrxTiO 3(BST)颗粒用于证明粒径对半导体BST烧结温度的影响。为了降低烧结温度,开发了三种方法,即1.使用具有烧结助剂的溶胶-凝胶纳米级Sb3 +掺杂粉末。 2使用微米级粉末加烧结助剂;和3使用具有烧结助剂的纳米级Sb3 +掺杂粉末。通过比较微米级粉末烧结颗粒和纳米级粉末烧结颗粒,研究了晶粒尺寸对PTCR特性的影响。前者在低于居里温度(Tc)的温度下具有较低的电阻率,而在居里温度(Tc)之上的温度下具有较高的电阻率,以及较高的rho / rhomin比(rhomax是在高于Tc的温度下最高的电阻率,rhomin是最低的电阻率)在低于Tc的温度下),而后者的rho max和rhomin都较高。另外,rhomax / rhomin比粒径较大的颗粒小。原因是晶粒尺寸小的固体比晶粒尺寸大的固体具有更多的晶界。在室温和高温下的贡献z和较低的rhomax / rhomin比值。

著录项

  • 作者

    Wu, Wenzhong.;

  • 作者单位

    Florida International University.;

  • 授予单位 Florida International University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 141 p.
  • 总页数 141
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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