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The nature of the distinctive microscopic features in R(5)(silicon germanium)(4) magnetic refrigeration materials.

机译:R(5)(硅锗)(4)磁性制冷材料中独特的微观特征的性质。

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摘要

Magnetic refrigeration is a promising technology that offers a potential for high energy efficiency. The giant magnetocaloric effect of the R5(Six,Ge1-x)4 alloys (where R=rare-earth and 0≤x≤1), which was discovered in 1997, make them perfect candidates for magnetic refrigeration applications. In this study the microstructures of Gd5(SixGe1-x)4 alloys have been characterized using electron microscopy techniques, with the focus being on distinctive linear features first examined in 1999. These linear features have been observed in R5(Six,Ge1-x) 4 alloys prepared from different rare-earths (Gd, Tb, Dy and Er) with different crystal structures (Gd5Si4-type orthorhombic, monoclinic and Gd5Ge4-type orthorhombic). Systematic scanning electron microscope studies revealed that these linear features are actually thin-plates, which grow along specific directions in the matrix material. The crystal structure of the thin-plates has been determined as hexagonal with lattice parameters a=b=8.53A and c=6.40A, using selected area diffraction (SAD). Energy dispersive spectroscopy analysis, carried out in both scanning and transmission electron microscopes, showed that the features have a composition approximating to R5(Six,Ge1-x )3.phase. Orientation relationship between the matrix and the thin-plates has been calculated as [-1010](1-211)p//[010](10-2) m. The growth direction of the thin plates are calculated as (22 0 19) and (-22 0 19) by applying the Deltag approach of Zhang and Purdy to the SAD patterns of this system. High Resolution TEM images of the Gd5Ge4 were used to study the crystallographic relationship. A terrace-ledge structure was observed at the interface and a 7° rotation of the reciprocal lattices with respect to each other, consistent with the determined orientation relationship, was noted. Both observations are consistent with the stated hypothesis that the growth direction of the thin-plates is parallel to an invariant line direction. Based on the terrace-ledge structure of the thin-plate interface a displacive-diffusional growth mechanism has been proposed to explain the rapid formation of the R 5(Six,Ge1-x)3 plates.
机译:磁制冷是一种有前途的技术,具有高能效的潜力。 1997年发现的R5(Six,Ge1-x)4合金(其中R =稀土且0≤x≤1)的巨大磁热效应使其成为磁制冷应用的理想之选。在这项研究中,使用电子显微镜技术对Gd5(SixGe1-x)4合金的微观结构进行了表征,重点是于1999年首次研究的独特线性特征。这些线性特征已在R5(Six,Ge1-x)中观察到。从不同的稀土(Gd,Tb,Dy和Er)制备的4种合金,具有不同的晶体结构(Gd5Si4型正交晶,单斜晶和Gd5Ge4型正交晶)。系统扫描电子显微镜研究表明,这些线性特征实际上是薄板,沿着基质材料中的特定方向生长。薄板的晶体结构已确定为六边形,晶格参数为a = b = 8.53A和c = 6.40A,使用选定的区域衍射(SAD)。在扫描电子显微镜和透射电子显微镜中进行的能量色散光谱分析表明,这些特征的组成近似于R5(Six,Ge1-x)3。相。矩阵与薄板之间的取向关系已计算为[-1010](1-211)p // [010](10-2)m。通过将Zhang和Purdy的Deltag方法应用于该系统的SAD模式,可以计算出薄板的生长方向为(22 0 19)和(-22 0 19)。 Gd5Ge4的高分辨率TEM图像用于研究晶体学关系。在界面处观察到梯级-壁架结构,并且注意到相互确定的倒角晶格相对于彼此旋转了7°,这与确定的取向关系一致。两种观察结果都与上述假设一致,即薄板的生长方向平行于不变的线方向。基于薄板界面的平台-壁架结构,提出了位移扩散生长机制来解释R 5(Six,Ge1-x)3板的快速形成。

著录项

  • 作者

    Ugurlu, Ozan.;

  • 作者单位

    Iowa State University.;

  • 授予单位 Iowa State University.;
  • 学科 Engineering Mechanical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 102 p.
  • 总页数 102
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 机械、仪表工业;工程材料学;
  • 关键词

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