Influence of doping concentration and contact geometry on the performance of interdigitated back-contact silicon heterojunction of liquid phase crystalline silicon on glass

摘要

and back surface field (BSF) finger width of 120 μm at emitter width of 1080 μm are demonstrated as optimized conditions to get the highest average cell efficiency. Spatially resolved methods such as light beam induced current (LBIC), photoluminescence (PL) and electroluminescence (EL) were used to investigate current losses. LBIC records showed that back-surface field (BSF) fingers were not well passivated and caused a loss of 2.6-2.7 mA/cm