Experimental Investigation of the Optimal Ingot Resistivity for both the Cell Performances and the Temperature Coefficients for Different Cell Architectures

摘要

Compensation engineering enables the achievement of lower ingot resistivities with relatively constant performances along the ingot height. In this paper the impact of the bulk resistivity on the cell performances and the temperature coefficients is investigated for compensated and non-compensated multicrystalline silicon. Based on experimental data we show that reducing the bulk resistivity below a certain value improves the temperature coefficients but deteriorates the cell performances for two distinct cell architectures (AI-BSF and PERCT). Moreover this performance loss is not balanced out by the improved temperature coefficient for operating conditions below 70°C.