Influence on light-induced degradation in Cz-Si PERC cells under light soaking of variant wavelength and intensity

摘要

We have carried out multiple analysis on the acceleration factors of LID for Cz-Si PERC cells, including temperatures, intensities and wavelengths at 396nm and 969nm. The recovery time of LID at 130 °C under 1 SUN shrinks down to 4 hrs and the maximum degradation in Pmax is less than 3 % due the elimination of B-O LID under high carrier-injection. However, it seems that higher intensities couldn't stop the second degradation from happening, indicating the formation of other defects. Therefore, we employ LED light source of different wavelengths and obtain that both maximum degradation of Pmax are quite different. The consequence implies that behavior of LID might be originated from the particular position (penetration depth) where carriers are located.