NITROGEN-INDUCED DECREASE OF THE ELECTRON EFFECTIVE MASS IN GaAs(1-x)N_x THIN FILMS MEASURED BY THERMOMAGNETIC TRANSPORT PHENOMENA

摘要

Thin films of GaAs_(1-x)N_x were grown on insulating GaAs substrates and subjected to temperature-dependent resistivity, Hall, Seebeck, and Nernst coefficient measurements. These data reveal a change in the dominant scattering from a phonon-like mechanism to a neutral impurity-like mechanism with increasing x. Density-of-states effective-mass values, calculated from the transport data, decrease from 0.084m_e to 0.029m_e as x varies from 0 to 0.004.