ELECTRON INJECTION-INDUCED EFFECTS IN III-NITRIDES

摘要

Application of a forward bias in GaN-based solid state devices - p-n junctions and Schottky barriers - leads to a significant increase of minority carrier diffusion length and lifetime. Consistent changes were observed in material optoelectronic properties, including spectral photoresponse, and were attributed to charging of deep metastable Mg-acceptor-related centers.