Er-DOPED GaN GROWN BY MOLECULAR BEAM EPITAXY

摘要

GaN films doped with Er were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (MBE). The incorporation of Er into the GaN films was achieved in-situ by the use of an effusion cell. The incorporation of Er was found to be in the range of 6x10~(17) to 2x10~(20) cm~(-3) corresponding to Er cell temperatures in the range from 900 to 1000 ℃. The highest incorporation level that has been observed was 1x10~(21) cm~(-3). Luminescence in the visible (414, 538, 559, and 667 nm) and near-infrared (1.00, 1.51, 1.54 and 1.55 μm) spectral regions was obtained at room temperature by electrical excitation.