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Deep Ultraviolet Light Emitting Diodes: Physics, Performance, and Applications

机译:深紫外发光二极管:物理,性能和应用

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摘要

The key factor for developing deep UV LEDs is material's quality of nitride epitaxial films. It could be dramatically improved by using novel MEMOCVD~® technique. Using very narrow quantum wells (QWs) and energy band gap engineering in deep UV LEDs improves overlap between electron and hole wave functions and increases the Internal Quantum Efficiency (IQE) and External Quantum Efficiency (EQE). A novel transparent and reflecting top contact further boosts IQE and EQE and increases the power output and high external quantum efficiency of our Deep UV LEDs. Research is now under way to use these devices for improving quality and extending storage time of fruits and vegetables. Other applications include water and air purification, sterilization, biological threat identification, applications in medicine, biology, industrial processes, defense, and homeland security.
机译:开发深紫外LED的关键因素是氮化物外延膜的材料质量。使用新颖的MEMOCVD〜®技术可以大大改善它。在深紫外LED中使用非常窄的量子阱(QW)和能带​​隙工程可改善电子和空穴波功能之间的重叠,并提高内部量子效率(IQE)和外部量子效率(EQE)。新颖的透明反射顶部接触进一步提高了IQE和EQE,并提高了我们的深紫外LED的功率输出和较高的外部量子效率。现在正在研究使用这些设备来提高质量并延长水果和蔬菜的存储时间。其他应用包括水和空气净化,灭菌,生物威胁识别,医学,生物学,工业过程,国防和国土安全方面的应用。

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  • 会议地点 Orlando FL(US)
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    ECSE and PAPA, Rensselaer Polytechnic Institute, Troy, NY 12180 USA;

    Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA;

    Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA;

    Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA;

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  • 正文语种 eng
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