Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

摘要

We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbOx/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO2, such as high temperature stability (∼160°C), fast switching speed (∼22ns), good switching uniformity, and extreme scalability of device area (ϕ∼10nm)/thickness (∼10nm) were obtained. By oxidizing NbO2, we can form ultrathin Nb2O5/NbO2 stack layer for hybrid memory devices with both TS and MS. Without additional selector device, 1Kb cross-point hybrid memory device without SET/RESET disturbance up to 10⁶ cycles was demonstrated.