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New Class of Thin Amorphous Films Produced by PE CVD from Organic Compounds of Carbon Family

机译:PE CVD由碳族有机化合物制备的新型非晶薄膜

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摘要

Electronic properties of amorphous hydrogenated films produced by plasma deposition (PE CVD) from organic compounds of carbon family (tetraalkyls of Si, Ge, Sn, and Pb) in an a.f. three-electrode reactor, have been investigated. It has been found that small changes in the parameter V_(-) cause a dramatic change in the electronic structure of the films. This effect is attributed to a transition between amorphous insulator and amorphous semiconductor.
机译:在a.f.中通过等离子体沉积(PE CVD)由碳族有机化合物(Si,Ge,Sn和Pb的四烷基)生产的非晶态氢化膜的电子性能。三电极反应堆,已经进行了研究。已经发现,参数V _(-)的小的变化引起薄膜的电子结构的巨大变化。该效应归因于非晶绝缘体和非晶半导体之间的过渡。

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