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Avalanche photodetector array based on metal-resistive layer-semiconductor structures

机译：基于金属电阻层-半导体结构的雪崩光电探测器阵列

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Abstract: The results of investigations of avalanche photodetectors based on metal-resistive layer-silicon (MRLS) structures are presented. Consideration is given to a 10 $MUL 10 MRLS photodetector array. !5

机译：摘要：提出了基于金属电阻层-硅（MRLS）结构的雪崩光电探测器的研究结果。考虑使用10 $ MUL 10 MRLS光电探测器阵列。！5

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来源
《Topical Meeting on Photonic Switching》|1992年|p.407-412|共6页
会议地点 Minsk(BY);Minsk(BY)
作者
V.B. Zalessky; Institute of Electronics; Minsk; Belarus; T.R. Leonova; Institute of Electronics; Minsk; Belarus; S.A. Malyshev; Institute of Electronics; Minsk; Belarus; V.R. Pan; Institute of Electronics; Minsk; Belarus; S.Y. Rakhley; Institute of Electr;
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正文语种 eng
中图分类无线电电子学、电信技术;
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2. High performance UV–visible avalanche photodetector based on single ${lpha}$-MoO$_3$ microbelt/p-Si heterostructure [J] . YI TIAN, NAISEN YU, SHIYU DU, Bulletin of materials science . 2021,第a期

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3. Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase alpha-Ga2O3/ZnO Isotype Heterostructures [J] . Chen Xuanhu, Xu Yang, Zhou Dong, ACS applied materials & interfaces . 2017,第42期

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4. Avalanche photodetector array based on metal-resistive layer-semiconductor structures [C] . V.B. Zalessky, T.R. Leonova, S.A. Malyshev, Topical meeting on photonic switching . 1993

机译：基于金属电阻层半导体结构的雪崩光电探测器阵列
5. Solar-Blind Ultraviolet Photodetectors, Focal Plane Arrays, and Visible-Blind Avalanche Photodiodes. [D] . Cicek, Erdem. 2014

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Avalanche photodetector array based on metal-resistive layer-semiconductor structures

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