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Efficient Modeling of Memory Arrays in Symbolic Ternary Simulation

机译:符号三元仿真中的内存阵列高效建模

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This paper enables symbolic ternary simulation of systems with large embedded memories. Each memory array is replaced with a behavioral model, where the number of symbolic variables used to characterize the initial state of the memory is proportional to the number of distinct symbolic memory locations accessed. The behavioral model provides a conservative approximation of the replaced memory array, while allowing the address and control inputs of the memory to accept symbolic ternary values. Memory state is represented by a list of entries encoding the sequence of updates of symbolic addresses with symbolic data. The list interacts with the rest of the circuit by means of a software interface developed as part of the symbolic simulation engine. This memory model was incorporated into our verification bool based on Symbolic Trajectory Evaluation. Experimental results show that the new model significantly outperforms the transistor level memory model when verifying a simple pipelined data path.
机译:本文实现了具有大型嵌入式存储器的系统的符号三元仿真。每个内存阵列都替换为一个行为模型,其中用于表征内存初始状态的符号变量的数量与访问的不同符号内存位置的数量成比例。行为模型提供了替换后的存储器阵列的保守近似值,同时允许存储器的地址和控制输入接受符号三进制值。存储器状态由条目列表表示,这些条目编码使用符号数据更新符号地址的顺序。该列表通过作为符号仿真引擎一部分开发的软件界面与电路的其余部分进行交互。该记忆模型基于符号轨迹评估被并入我们的验证布尔中。实验结果表明,当验证简单的流水线数据路径时,新模型明显优于晶体管级存储器模型。

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