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Efficient Modeling of Memory Arrays in Symbolic Ternary Simulation

机译:符号三元仿真中内存阵列的高效建模

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This paper enables symbolic ternary simulation of systems with large embedded memories. Each memory array is replaced with a behavioral model, where the number of symbolic variables used to characterize the initial state of the memory is proportional to the number of distinct symbolic memory locations accessed. The behavioral model provides a conservative approximation of the replaced memory array, while allowing the address and control inputs of the memory to accept symbolic ternary values. Memory state is represented by a list of entries encoding the sequence of updates of symbolic addresses with symbolic data. The list interacts with the rest of the circuit by means of a software interface developed as part of the symbolic simulation engine. This memory model was incorporated into our verification bool based on Symbolic Trajectory Evaluation. Experimental results show that the new model significantly outperforms the transistor level memory model when verifying a simple pipelined data path.
机译:本文使具有大型嵌入式存储器的系统符号三元模拟。每个存储器阵列被替换为行为模型,其中用于表征存储器的初始状态的符号变量的数量与访问的不同符号存储器位置的数量成比例。行为模型提供替换存储器阵列的保守近似,同时允许存储器的地址和控制输入以接受符号值。内存状态由编码具有符号数据的符号地址序列的条目列表。列表通过作为符号仿真引擎的一部分开发的软件接口与其余的电路交互。基于符号轨迹评估,该存储器模型纳入了我们的验证布尔。实验结果表明,当验证简单的流水线数据路径时,新模型显着优于晶体管级存储模型。

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