Effect of gas ambient on the synthesis of Al and N co-doped ZnO:(Al,N) films and their influence on PEC response for photoelectrochemical water splitting application

摘要

Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N_2 and mixed O_2 and N_2 gas ambient at 100℃. The ZnO:(Al,N) films deposited in mixed Ar and N_2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O_2 and N_2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O_2 and N_2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N_2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.