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PHOTOELECTROCHEMICAL WATER SPLITTING WITH CO-DOPED Al AND N ZnO: (AI, N) THIN FILMS

机译:具有共掺杂Al和N ZnO的光电化学水分:(AI,N)薄膜

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Sustainable hydrogen production through photoelectrochemical water splitting using metal oxide is a promising approach for the chemical storage of solar energy, but for most of the metal oxide the bandgap must be reduced to shift the absorption into the visible regions to use sunlight more efficiently. An investigation of Al and N co-doped ZnO thin films are presented. Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering. The ZnO:(Al,N) films showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited showed higher photocurrents due to N incorporation and crystallinity.
机译:通过使用金属氧化物的光电化学水分裂的可持续氢气是一种有希望的太阳能化学储存的方法,但对于大多数金属氧化物,必须减少带隙以将吸收移入可见区域以更有效地使用阳光。提出了对Al和N共掺杂ZnO薄膜的研究。通过射频磁控溅射合成Al和N掺杂ZnO薄膜,ZnO:(Al,N)。与ZnO:N薄膜相比,ZnO:(Al,N)薄膜显示出增强的N掺入和结晶度,与沉积在同一气体环境中的薄膜。结果,沉积的ZnO:(Al,N)薄膜由于N掺入和结晶度而显示出更高的光电流。

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