Recently, we have reported the self-formation of high lateral density and well-aligned QD structures by growing the (GaP)1.5(InP)1.88 short period superlattices (LSs) on (GaAs) (311)A and (411)A substrates by gas source molecular beam epitaxy (MBE) [1, 2]. IN the STM images, we observed a high lateral density of self-formed QD structures. They are aligned along two perpendicular directions ([0-11] and [-233] directions) on GaAs (311) A substrate [3]. The periods of these structures are about 20 nm. The distribution is +-10
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