首页> 外文会议>The Third SANKEN international symposium on advanced nanoelectronics : Devices, materials, and computing >Optical properties of Al_xGa_(1-x)As/AlAs quantum wires under high density excitation
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Optical properties of Al_xGa_(1-x)As/AlAs quantum wires under high density excitation

机译:高密度激发下Al_xGa_(1-x)As / AlAs量子线的光学性质

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Optical properties of semiconductors under high density excitation have been extensively investigated since various phenomena due to many-body effects appear. In particular, low-dimensional quantum structures such as quantum wires have attraced a great interest in their novel physical properties. We pay attention to the many-body effects of electron-hole paris in quantum wire structure under the high density excitation. IN this paper, we have studied photoluminescence (PL) properties in Al_xGa_(1-x)As/AlAs quantum wires (QWRs) under the high density excitation.
机译:由于出现了由于多体效应引起的各种现象,因此已经对高密度激发下的半导体的光学特性进行了广泛的研究。尤其是,诸如量子线之类的低维量子结构对其新颖的物理特性引起了极大的兴趣。我们关注高密度激发下量子线结构中电子空穴巴黎的多体效应。在本文中,我们研究了高密度激发下Al_xGa_(1-x)As / AlAs量子线(QWR)中的光致发光(PL)特性。

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