Modeling for the formation of multiple-type COPs in Cz-Si

摘要

A conceptual model that can explain the formation of multipletype COPs in a Czochralski grown silicon single crystal was proposed. in this model, a new concept of coalescence growth of vacancy cluster was introduced. Minimization of interfacial energy of void could be considered as its driving force. Several characteristics related to the morphology and formation kinetics of multiple-type vacancy cluster could be described from this model.