Reversible Positive Charge Annealing in MOS Transistor During Variety of Electrical and Thermal Stresses

机译：各种电应力和热应力作用下MOS晶体管中的可逆正电荷退火

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The postirradiation response of n-channel MOSTs during thermal and electrical stresses is investigated. It is found that reversible positive charge annealing plays a key role in the postirradiation response of MOST. Mathematical model of reversible charge relaxation process is suggested.

机译：研究了在热和电应力作用下n沟道MOSTs的辐照后响应。发现可逆的正电荷退火在MOST的后辐照响应中起关键作用。提出了可逆电荷弛豫过程的数学模型。

著录项

来源
《Third European conference on radiation and its effects on components and systems》|1995年|61-65|共5页
会议地点 Arcachon(FR);Arcachon(FR)
作者
V.V. Emelianov; G.I. Zebrev; V.N. Ulimov; R.G. Useinov; V.V. Belyakov; V.S. Pershenkov;
展开▼
作者单位

Research Institute of Scientific Instruments, Moscow reg., 140061, Russia;

Research Institute of Scientific Instruments, Moscow reg., 140061, Russia;

Research Institute of Scientific Instruments, Moscow reg., 140061, Russia;

Research Institute of Scientific Instruments, Moscow reg., 140061, Russia;

Moscow Engineering Physics Institute, Moscow, 115409, Russia;

Moscow Engineering Physics Institute, Moscow, 115409, Russia;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类辐射防护;
关键词
入库时间 2022-08-26 13:48:31

相似文献

外文文献
中文文献
专利

1. Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses [J] . Emelianov V.V., Zebrev G.I. IEEE Transactions on Nuclear Science . 1996,第3期

机译：在各种电应力和热应力下，MOS晶体管中可逆的正电荷退火
2. Nano-scale surface morphology optimization of the ohmic contacts and electrical properties of AlGaN/GaN high electron mobility transistors using a rapid thermal annealing dielectric protection layer [J] . Sung-Jin Cho, Cong Wang, Nam-Young Kim Thin Solid Films . 2014,第apra30期

机译：使用快速热退火介电保护层的AlGaN / GaN高电子迁移率晶体管的欧姆接触和电性能的纳米级表面形态优化
3. Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs/InP channel [J] . Yuwei Liu, Hong Wang Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2006,第1期

机译：快速热退火对具有复合InGaAs / InP沟道的变质高电子迁移率晶体管结构的光电性能的影响
4. Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses [C] . Emelianov, V.V., Zebrev, . 1996

机译：在各种电应力和热应力下，MOS晶体管中可逆的正电荷退火
5. Impact of electrically and thermally induced physical defects on the reliability of AlGaN/GaN high electron mobility transistors. [D] . Holzworth, Monta Raymond, Jr. 2013

机译：电和热感应物理缺陷对AlGaN / GaN高电子迁移率晶体管的可靠性的影响。
6. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness [O] . Ye Kyun Kim, Cheol Hyoun Ahn, Myeong Gu Yun, -1

机译：具有高性能和超薄厚度的低温可加工非晶InGaZnO薄膜晶体管的周期性脉冲湿退火方法
7. Annealing effect on the electrical proprieties of IF(CN2)2-meta based OTFTs: Thermal behavior and modeling of charge transport [O] . N. Arfaoui, M. Mahdouani, I. Bouhadda, 2018

机译：对IF（CN2）2-META基于OTFTS的电器的退火效应：热行为和电荷运输建模

Reversible Positive Charge Annealing in MOS Transistor During Variety of Electrical and Thermal Stresses

摘要

著录项

相似文献

相关主题

期刊订阅