Improved Thermal Stability of Indium Zinc Oxide TFTs by Low Temperature Post annealing

摘要

Mixed oxide thin-film transistors (TFTs) have been extensively researched and have attracted a lot of industrial attention for large area electronics due to their higher mobility and improved stability under bias stress compared to amorphous silicon TFTs (1-4). There has been a considerable interest in developing transparent flexible electronic devices such as paper displays and wearable computers (5). The amorphous nature of these metal oxides provides a potential for improved performance, reproducibility and uniformity in large areas at relatively low processing temperatures, which in addition enables fabrication on polymer flexible substrates. A number of different low fabrication temperature metal oxide semiconductor TFTs such as zinc oxide (ZnO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO) have been investigated (6-8). However, fabrication of these TFTs at such low temperatures can generate a large number of defects in the large band-gap because of their complex nature (9-10). The presence of these defects can be a latent problem (e.g., poor performance and thermal instability).