A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack

摘要

We fabricated a thin-film transistor (TFT) with an amorphous InGaZnO (a-IGZO) and aluminum oxide (AlOx) gate dielectric stack that was deposited by a solution-based atmospheric pressure chemical vapor deposition. Field effect mobility of 4.1 cm~2· V~(-1)·s~(-1) and on/off current ratio of over 10~8 were obtained. We also investigated the effects of an ozone (O_3) surface treatment of gate dielectric on electrical properties of the IGZO TFTs. The O_3 surface treatment of the AlOx gate dielectric reduced the maximum area density of states in the IGZO TFTs. Moreover, transfer curve hysteresis also decreased by applying the O_3 surface treatment of the AlOx gate dielectric.