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CdTe, CIGS and a-Si thin film PV technologies: factors impacting LCOE

机译:CdTe,CIGS和a-Si薄膜光伏技术:影响LCOE的因素

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We describe thin film photovoltaic (PV) technologies that have been scaled in manufacturing, and contrast their attributes and how they impact the levelized cost of electricity (LCOE). The thin film PV technologies reviewed include cadmium tefluride (CdTe), copper indium gallium selenide (CIGS), amorphous silicon (a-Si), and microcrystalline/amorphous silicon (u/a-Si) produced by a variety of methods. The factors studied include conversion efficiency, energy yield under different lighting and environmental conditions, location dependence, tracked/fixed tilt differential performance, uptime, output degradation rate, failure rate, lifetime, module cost, balance of system (BOS) and inverter cost, installation cost, land cost, operation cost, maintenance cost and finance cost. These thin film PV technologies are compared with crystalline silicon, the most widely deployed PV technology.
机译:我们描述了已在制造中规模化的薄膜光伏(PV)技术,并对比了它们的属性以及它们如何影响平均电费(LCOE)。审查的薄膜光伏技术包括四氟化镉(CdTe),硒化铜铟镓(CIGS),非晶硅(a-Si)和通过多种方法生产的微晶/非晶硅(u / a-Si)。研究的因素包括转换效率,在不同照明和环境条件下的能量产出,位置依赖性,跟踪/固定的倾斜微分性能,正常运行时间,输出降级率,故障率,寿命,模块成本,系统平衡(BOS)和逆变器成本,安装成本,土地成本,运营成本,维护成本和财务成本。将这些薄膜光伏技术与使用最广泛的光伏技术晶体硅进行比较。

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