Thickness Effect of LaNiO_3 Buffer Layer on Microstructure and Electrical Properties of PZT Thin Films

摘要

The thickness effects of (LaNiO_3) LNO buffer layer on microstructure and electrical properties of PZT thin films were investigated. XRD patterns show that the orientation of PZT films directly prepared on the random-oriented Pt coated substrates exhibits random orientation, and that the PZT films with buffer layer reveal (100) preferred orientation to match with the (100)-oriented LNO buffer layer. Moreover, (100) orientability arises higher and the grain size becomes smaller with increasing thickness of LNO layer. As a result, the higher dielectric constant is obtained. The improvement of fatigue behaviors is due to that LNO thin films can alleviate the oxygen vacancy accumulation at the ferroelectric-electrode interface.