Preparation of CoSi_2 Using Microwave Hydrogen Plasma Annealing

摘要

Microwave hydrogen plasma annealing of sputter-deposited cobalt films on Si(100) substrate was utilized to form CoSi_2 films which were characterized utilizing X-ray dirfraction(XRD), Auger electron spectra(AES) sputter depth profile and cross-sectional Field Emission Scanning Electron Microscope (FESEM). Polycrystalline CoSi_2 , dominated by components with (111), was grown at the annealing temperature 600℃ whereas microwave hydrogen plasma annealing at 750℃ made components with (100) dominated. Moreover, it speculates that microwave anneal which promote Co atoms diffusion into Si substrate for nano-meter cobalt film during microwave anneal.