Photovoltaic feature of boron-doped nano-crystalline carbon films on silicon

摘要

Boron-doped diamond-like carbon (B-DLC) thin films were deposited on n-type silicon (100) substrates by arc-discharge plasma chemical vapor deposition (arc-PCVD) technique, followed by a deposition of TiN_x (0.8 < x < 1.1) mark on top of the carbon films to form heterojunction devices. The crystallinity of the carbon film was confirmed to be a mixing of sp~3/sp~2 coordination with nanocrystalline diamond grains embedded in the amorphous network. The performance of TiN_x / p-C (B) / n-Si / AuSb heterojunction cells has been evaluated under dark Ⅰ-Ⅴ rectifying curve and Ⅰ-Ⅴ working curve with a proper illumination. At higher boron content the films exhibited a high internal conductivity and an overall phase-related character. The TiN_x exhibited an excellent ohmic contact behavior as a metallic electrode of the devices.