EFFECT OF QUANTUM CONFINEMENT IN SOI SINGLE-HOLE TRANSISTORS

摘要

SOI single-hole transistors with various designed pattern sizes have been fabricated by converting a quantum wire to an island (or multiple islands) contacted to the source and the drain. The Coulomb blockade effect has been observed. Quantum mechanics has been investigated by solving the Poisson and Schroedinger equations in a self-consistent manner. The results show that the lower ground-state energy of the hole in narrow constrictions serves as a potential barrier which results in a Coulomb blockade effect.