NANO GAP FABRICATION BY THERMAL STRESS CLEAVAGE ON SIMOX SOI FOR LATERAL FED APPLICATION

摘要

We have fabricated nano meter scale gap by thermal stress cleavage on SIMOX SOI for lateral field emission device application. The gap between anode and cathode is obtained by thin film stress which have been generated during thermal cycle. The gap size can be controlled precisely and reliably from tens to hundreds nano meters. We have investigated the control parameters of gap formation. There is a critical temperature for making thermal stress cleavage, however it hardly affects to the gap size. The gap spacing is dependent on crystal orientation alignment to the gap formation and geometrical shapes of electrodes which are waist width, waist angle, and its area. The diode using single crystalline lateral field emitters has been successfully fabricated and operated.