首页>
外国专利>
METHOD OF FORMING A SMALL GAP AND ITS APPLICATION TO THE FABRICATION OF A LATERAL FED
METHOD OF FORMING A SMALL GAP AND ITS APPLICATION TO THE FABRICATION OF A LATERAL FED
展开▼
机译:小缝隙的形成方法及其在横向进料制造中的应用
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method of forming a small gap using CMP and a method for manufacturing a lateral FED. In the present invention, a small gap is determined by the thickness of an oxide film, and so uniform small gaps of about 100 Å that have been impossible to attain with the art of prior lithography can be formed with repeatability. Prior lateral field emission devices have the problem of repeatability in forming a gap for field emission because they are fabricated by means of a thermal stress method or an electrical stress method. But if the method of forming a small gap according to the present invention is used to fabricate a lateral FED, a FED can be made that has low voltage drive and high current drive characteristics and uniform field emission characteristics.
展开▼