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Measurement of nonuniform stresses in semiconductors by the micro-raman method

机译:用微拉曼法测量半导体中的非均匀应力

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摘要

Micro-Raman measurements are performed with a focused laser beam. Because of its finite diameter (approx 1 mu m) and penetration depth, the laser beam samples a "large volume" of the sample. In a nonuniformly strained sample, spectra originating from different points are different. Therefore the observed spectrum depends on both the strain distribution in the sample and the absorption coefficient of the laser light. We describe a method to calculate the Raman spectra taking these factors into account. The calculated spectra show excellent agreement with the experimental results.
机译:用聚焦激光束进行微拉曼测量。由于其有限的直径(大约1微米)和穿透深度,激光束对样品进行了“大体积”采样。在非均匀应变的样品中,源自不同点的光谱是不同的。因此,观察到的光谱取决于样品中的应变分布和激光的吸收系数。我们描述了一种考虑这些因素来计算拉曼光谱的方法。计算出的光谱与实验结果非常吻合。

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