首页> 外文会议>Symposium on In Situ Process Diagnostics and Modelling held April 6-7, 1999, San Francisco, California, U.S.A. >Combined spectroscopic ellipsometry and ion beam surface analysis for in-situ real-time characterization of complex oxide film growth
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Combined spectroscopic ellipsometry and ion beam surface analysis for in-situ real-time characterization of complex oxide film growth

机译:椭圆偏振光谱法和离子束表面分析相结合,用于实时实时表征复杂氧化物膜的生长

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摘要

In-situ real time characterization of chemically and structurally complex thin films is becoming important as complex materials are finding more applications in electronic devices. To this end, a unique thin film growth and deposition system was constructed combining a multi-target sputter deposition system with spectroscopic ellipsometry and time-of-flight ion scattering and recoil spectroscopy. This system is demonstrated with studies on YBa_2Cu_3O_(7- delta ) and BaSrTiO_3 films.
机译:随着复杂材料在电子设备中的更多应用,化学和结构复杂的薄膜的原位实时表征变得越来越重要。为此,构建了一个独特的薄膜生长和沉积系统,该系统将多目标溅射沉积系统与光谱椭偏仪,飞行时间离子散射和反冲光谱仪相结合。通过对YBa_2Cu_3O_(7- delta)和BaSrTiO_3薄膜的研究证明了该系统。

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