Photoluminescence study of defects induced by B_(10)H_(14) ions

摘要

Defect formation in Si by B_(10)H_(14) (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B_(10)H_(14)~+ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperature annealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B_(10)H_(14) is expected to be different from that of B~+ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B_(10)H_(14) implantation creates a larger number of dislocated Si atoms than that of B~+ implantation with the same energy per atom. This characteristic of B_(10)H_(14) implantation may cause the different defect reactions in subsequent annealing process.