Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon

摘要

The point defect injection from arsenic precipitation was studied using boron marker layers and antimony doped superlattices. Comparisons of arsenic and germanium amorphizing implants showed similar boron marker layer diffusion enhancements after spike annealing. The results indicate that the end of range damage caused by the implants was the source of the diffusion enhancement. Additional annealing cycles showed that there was retardation in the diffusion enhancement of the boron marker layers for precipitation range arsenic implants. Antimony marker layers showed no diffusion enhancement due to vacancy injection. The results of the experiments indicate that arsenic-interstitial complexes are the cause of the decrease flux of interstitials to the bulk.