Self-assembled III-phospide quantum dots grown by metalorganic chemical vapor deposition

摘要

We report InP self-assembled quantum dots embedded in In_(0.51)Al_(0.49)P grown by metalorganic chemical vapor deposition. Growth parameters are altered to study the InP quantum-dot growth characteristics under various growth conditions. Quantum-dot morphology is characterized using atomic-force microscopy. Also, photoluminescence studies of the light-emitting properties are performed. Direct-bandgap ternary In_xAl_(1-x)P (x=approx0.7, approx0.85) self-assembled quantum dots are also grown and compared with InP quantum dots.