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Epitaxy of Self-assembled InAs Quantum Dots on Si Substrates by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

机译：大气压金属化学气相沉积SI基板上自组装INAS量子点的外延

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Choong-Hyun Yoo;
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年度 2005
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1. InAs/GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots [J] . Jun Tatebayashi, Yasuhiko Arakawa, Nobuaki Hatori, Applied Physics Letters . 2004,第6期

机译：金属有机化学气相沉积法生长的InAs / GaAs自组装量子点激光器-生长后退火对堆叠的InAs量子点的影响
2. Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs/GaAs by low-pressure metalorganic chemical vapor deposition [J] . Yang T, Tsukamoto S, Tatebayashi J, Applied Physics Letters . 2004,第14期

机译：通过低压金属有机化学气相沉积提高在InGaAs / GaAs上生长的自组装InAs量子点的均匀性
3. Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition [J] . Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Applied Physics Letters . 2004,第15期

机译：低压金属有机化学气相沉积法产生的高度均匀的自组装InAs / GaAs量子点产生的窄光致发光线宽（<17 meV）
4. CW LASEVG OF SELF-ASSEMBLED INAS QUANTUM DOT LASERS ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION [C] . J. Tatebayashi, H. Kakuma, N. Hatori, Pacific Rim Conference on Lasers and Electro-Optics . 2003

机译：通过金属有机化学气相沉积生长的GaAs基材的自组装INAS量子点激光器的CW LASEVG
5. Aluminum gallium arsenide-gallium arsenide-indium gallium arsenide-indium arsenide quantum dot coupled to quantum well heterostructure lasers by low-pressure metalorganic chemical vapor deposition. [D] . Chung, Theodore. 2003

机译：铝砷化镓-砷化镓-砷化镓-砷化铟量子点通过低压金属有机化学气相沉积与量子阱异质结构激光器耦合。
6. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique [O] . Tanuj Dhawan, Renu Tyagi, RajeshKumar Bag, 2010

机译：金属有机化学气相沉积技术在锗衬底上生长InAs量子点
7. Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties [O] . A. Passaseo, M. De Vittorio, M. T. Todaro, 2003

机译：由金属化学气相沉积和分子束外延生长的量子点激光结构的辐射和结构性能的辐射和结构性能的比较：对激光特性的影响
8. Properties of InP Self-Assembled Quantum Dots Embedded in In0.49(Al(x) Ga(1-x))0.51P Grown by Metalorganic Chemical Vapor Deposition. [R] . Dupuis, R. D., Ryou, J. H., Reddy, C. V., 2001

机译：嵌入In0.49（al（x）Ga（1-x））0.51p金属有机化学气相沉积Inp自组装量子点的性质。

Epitaxy of Self-assembled InAs Quantum Dots on Si Substrates by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

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