首页> 外文会议>Symposium Proceedings vol.872; Symposium on Micro- and Nanosystems- Materials and Devices; 20050328-0401; San Francisco,CA(US) >In-Situ Pretreatment Approach for Surface Deterioration Alleviation Amidst Thermal Desorption of GaAs(100)
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In-Situ Pretreatment Approach for Surface Deterioration Alleviation Amidst Thermal Desorption of GaAs(100)

机译:GaAs(100)热脱附中表面劣化减轻的原位预处理方法

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摘要

Within this study, a novel in-situ pretreatment is proposed theoretically and demonstrated experimentally, in which the formation of surface pits is subsequently stifled during thermal desorption. The proposed method involves fueling the well reviewed chemical oxide reduction reaction with a segregated source of material other than that ordinarily utilized in pit formation. The proposed method is implementable in virtually all deposition systems subject to the constraints of providing material deposition, substrate heating, and the creation of non-oxidizing environments either via vacuum or inert atmo sphere.
机译:在这项研究中,从理论上提出了一种新颖的原位预处理,并通过实验进行了证明,其中在热解吸过程中随后抑制了表面凹坑的形成。所提出的方法包括用通常在凹坑形成中所使用的材料以外的单独的材料源来为经过良好评价的化学氧化物还原反应提供燃料。所提出的方法实际上可在所有沉积系统中实施,但受制于通过真空或惰性气氛提供材料沉积,基板加热以及创建非氧化环境的限制。

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